Input/output compression and pin reduction in an integrated circuit

ABSTRACT

An I/O compression apparatus, for testing a memory array and/or a logic circuit, is comprised of a selectable compression circuit that outputs compressed test data from the memory array/logic circuit. An I/O scan register is coupled to each I/O pad for converting serial data to parallel and parallel data to serial in response to a test mode select signal, a test data input, and a test clock.

RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.11/709,982, titled “INPUT/OUTPUT COMPRESSION AND PIN REDUCTION IN ANINTEGRATED CIRCUIT,” filed Feb. 23, 2007 (allowed), and commonlyassigned and incorporated herein by reference.

TECHNICAL FIELD

The present embodiments relate generally to integrated circuits andparticularly to memory devices.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits in computers or other electronic devices. There aremany different types of memory including random-access memory (RAM),read only memory (ROM), dynamic random access memory (DRAM), synchronousdynamic random access memory (SDRAM), and flash memory. Generally, thesecan be considered either volatile or non-volatile memory.

Flash memory devices have developed into a popular source ofnon-volatile memory for a wide range of electronic applications. Flashmemory devices typically use a one-transistor memory cell that allowsfor high memory densities, high reliability, and low power consumption.Common uses for flash memory include personal computers, personaldigital assistants (PDAs), digital cameras, and cellular telephones.Program code and system data such as a basic input/output system (BIOS)are typically stored in flash memory devices for use in personalcomputer systems.

The manufacturing of memory devices typically includes a testingoperation such as the testing standard IEEE 1149.1, also known as JointTest Action Group (JTAG) boundary scan testing. The JTAG boundary scanmethod comprises a boundary scan cell coupled to predetermined pins ofthe integrated circuit. Test data is input to one or more boundary pinsof the circuit. Another boundary pin or pins of the circuit are thenchecked for a predetermined output signal. Since the functions andtopology of the tested part are known, the output signal will be known.

This testing can be a complicated, time consuming process. As memorydevices become increasingly more complex and the memory densityincreases, the cost for testing also increases. Since the memorymanufacturer has to test a large number of memory devices, even a smallincrease in test time, multiplied by the large number of memory devices,creates a problem for the manufacturer.

For the reasons stated above, and for other reasons stated below whichwill become apparent to those skilled in the art upon reading andunderstanding the present specification, there is a need in the art fora way to reduce the time required to test a large number of integratedcircuits.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a block diagram of one embodiment of an I/O compressionapparatus in an integrated circuit.

FIG. 2 shows a diagram of one embodiment of an I/O boundary scan inputpath in an integrated circuit.

FIG. 3 shows a diagram of one embodiment of an I/O boundary scan outputpath in an integrated circuit.

FIG. 4 shows a block diagram of one embodiment of the boundary scanregisters as illustrated in FIGS. 2 and 3.

FIG. 5 shows a flow chart of one embodiment of a method for I/Ocompression during testing of an integrated circuit.

FIG. 6 shows a timing diagram of one embodiment of the signals usedduring a register write operation.

FIG. 7 shows a timing diagram of one embodiment of the signals usedduring command latch and address latch cycles.

FIG. 8 shows a timing diagram of one embodiment of the signals usedduring a serial data input operation.

FIG. 9 shows a timing diagram of one embodiment of the signals usedduring a serial data output operation.

FIG. 10 shows a block diagram of one embodiment of a test system.

FIG. 11 shows a block diagram of one embodiment of an open/shorts check.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings that form a part hereof and in which is shown, byway of illustration, specific embodiments. In the drawings, likenumerals describe substantially similar components throughout theseveral views. These embodiments are described in sufficient detail toenable those skilled in the art to practice the invention. Otherembodiments may be utilized and structural, logical, and electricalchanges may be made without departing from the scope of the presentinvention. The following detailed description is, therefore, not to betaken in a limiting sense, and the scope of the present invention isdefined only by the appended claims and equivalents thereof.

FIG. 1 illustrates a block diagram of one embodiment of an I/Ocompression and pin reduction apparatus for testing an integratedcircuit. The embodiment of FIG. 1 illustrates the testing as applied toa non-volatile memory device 100. The illustrated memory device 100 maybe one of many different architectures of memory including NAND flash,NOR flash, or AND flash. The describe embodiments, however, are notlimited to any one type of integrated circuit.

The illustrated embodiments reduce the integrated circuit pin count toeight signals that are coupled to input/output (I/O) pins during thetesting process. These pins include test data in (TDI), test data out(TDO), test clock (TCK), test mode select (TMS), command latch enable(CLE), address latch enable (ALE), write enable (WE*), and read enable(RE*). The WE* and RE* signals are active low as signified by theasterisk. These signals will be described in greater detailsubsequently. In one embodiment, the TDI, TDO, TCK, and TMS pins are notconnected with bond wires to external pads of the integrated circuit. Inan alternate embodiment, the TDI, TDO, TCK, and TMS pins, as well asother pins, can be multiplexed.

The TDI signal is a serial data input signal. This signal is comprisedof the test data to be input to the circuit under test. The TDO signalis a serial data output signal. This signal is comprised of the testdata that is read out from the circuit under test and is input to thetest fixture for comparison with a known/desired response.

The TCK signal is the test clock signal that clocks data into and out ofthe I/O scan registers 113. The TMS signal is a control signal thatselects between parallel and serial operation of the I/O scan registers113, as illustrated in FIG. 1. When TMS is a logic high, the serial modeis selected. When TMS is a logic low, the normal, parallel mode isselected.

The TMS pin also has a secondary function that is used to initiate thetest operation. A high voltage (e.g., approximately 20V) is applied tothe TMS pin. This forces the CE* line to go low. Data (e.g., commandsand data to a register) can then be clocked in through the serial I/Oscan registers, as illustrated subsequently in FIGS. 2, 3, and 4. In analternate embodiment, other ways besides a high voltage for forcing theCE* line low can be used.

The ALE signal is the active high address latch enable. This signalindicates to the memory device 100 that the I/O lines of the memorycontain valid address information. While ALE is active (i.e., logicalhigh), address information can be transferred from the memory controllerto the on-chip address register. In one embodiment, the addresses arelatched into the register upon transition of another signal such as thewrite enable signal WE*.

The WE* is the active low write enable signal that is used to gatetransfers of data/addresses from the memory controller to the memorydevice 100. In one embodiment, a low-to-high transition of this signalprovides the latch indication. Data are written from the controller tothe memory 100 on the rising edge of WE* when CE*, CLE, and ALE are allat a logic low.

The CLE signal is the command latch enable. This active high signalprovides an indication to the memory device 100 that command data isavailable on the I/O lines. The WE* signal can be used to gate thecommands into the memory command register.

The RE* signal is the read enable strobe. This is an active low signalthat gates data transfers from the memory device 100, over the data orI/O bus, to the memory controller. RE* instructs the memory device 100to drive requested data onto the data bus.

The memory device 100 is comprised of a plurality of data I/O pads 101.For purposes of clarity, all of the pads are illustrated as one block101. The I/O pads 101 can also be referred to as the DQ0-DQ7 pads. Whilea typical integrated circuit under test may have a large quantity of I/Opads, not all of the pads are required to be tested and, therefore, donot require the circuitry illustrated in FIG. 1.

The I/O pads 101 are coupled to the I/O buffers 103. These buffers 103are also illustrated in FIGS. 2 and 3. The I/O buffers 103 are coupledto the memory array 105 or other circuit logic to be tested.

An I/O scan register block 113 is coupled to the TCI TMS, and TDIsignals. This block 113 is comprised of a plurality of I/O registersthat are responsible for the serial-to-parallel and parallel-to-serialconversion of data to and from the memory array 105 to be tested. TheI/O buffers 103 are coupled to the I/O scan registers in a parallelfashion. The serial data from the TDI input is converted to paralleldata for input to the I/O buffers 103. The parallel data from the I/Obuffers 103 is converted to a serial data stream for output. The outputof the I/O scan registers 113 is input to the test fixture (not shown).The I/O scan register block is shown in greater detail with reference toFIGS. 2 and 3.

A 1:8 expansion buffer 111 is also coupled to the serial input data TDIsignal. A data bit that is loaded into the buffer 111 is replicated onall eight outputs of the buffer 111. The eight bits of test data arethen loaded into the memory array through the I/O buffers 103 fortesting. The expansion buffer 111 reduces the number of data bits to beclocked in and, thus, reduces the test time. Instead of having to clockin eight bits, only one bit is required that is then expanded.

An 8:1 and 8:2 compression block 109 is coupled to the I/O buffers 103.The compression block 109 provides a selectable compression ratio ofeither eight-to-one or eight-to-two, as required by differentembodiments. The output of the compression block 109 is coupled to theTDO signal. The compression is turned on and the desired compressionratio is selected by writing a predetermined control word to theappropriate register.

The compression output provides either one bit for every eight bits ortwo bits for every eight bits. In one embodiment, the output is alogical one if all eight bits are one, a logical zero if all eight bitsare zero, and if the eight bits do not match, the compression block 109output is a high impedance state. In another embodiment, a DRAM toggleis output when the eight bits do not match. The DRAM toggle is atransition from a logical one to a logical 0 if the eight bits do notmatch.

An 8:1 transfer multiplexer 107 is coupled to the memory array 105. Themultiplexer 107 enables the test fixture to access the bit lines of thememory array 105.

FIG. 2 illustrates a block diagram of one embodiment of an I/O scaninput path in the memory device 100 of FIG. 1. The input is comprised ofthe serial TDI signal that is input to one of the I/O scan registers200. In the illustrated embodiment, the TDI signal is input to the DQ0I/O scan register 200. The signal is then clocked serially from the DQ0I/O scan register 200 upward through the remaining I/O scan registers201-207. The outputs of each register 200-207 is output serially to itsrespective DQx input buffer 210-217. The input buffers 103 are theninput to the memory array and/or logic circuit 105 under test.

FIG. 3 illustrates a block diagram of one embodiment of an I/O scanoutput path in the memory device 100 of FIG. 1. The memory array and/orlogic circuit under test 105 is coupled to the DQ0-DQ7 output buffers103. The individual buffers 210-217 are coupled to their respective I/Oscan registers 200-207. The data from these registers 200-207 areclocked serially to the TDO output. As previously described, the TDOoutput is coupled to the test fixture in order to compare the clockedout test data to the known data that was originally stored.

FIG. 4 illustrates a block diagram of one embodiment of an I/O scanregister as illustrated in FIGS. 2 and 3. This circuit is provided onlyfor purposes of illustration as the present embodiments can be achievedthrough various different circuits.

The register is comprised of a D flip-flop 400 that is used to latchdata. The data is input through a multiplexer 401 that has inputscoupled to a parallel in line and a serial in line. The TMS signal iscoupled to the control input of the multiplexer 401 to select betweenthe parallel mode and the serial mode as previously discussed.

The TCK clock signal is coupled to the D-FF clock input to clock thedata into the D-FF. The non-inverted output (Q) of the D-FF is output asthe serial output of the register. The inverted output (Q*) of the D-FFis output through two transistor output circuits 410, 411 that act aspass gate circuits between the circuit of FIG. 4 and the paralleloutput.

A level shifter block 403 is coupled to the TMS signal. The levelshifter translates the incoming TMS logic signal to an outgoing signalthat has a higher V_(CC) bias. For purposes of illustration, theinternal VCC is set at 2.3V while the external VCC can vary between 2.7Vand 3.6V.

The outputs of the level shifter circuit 403 are coupled to twoinverters 405, 406 that are biased to the external VCC. These inverters405, 406 are used for buffering to help drive the pass gate load circuit410. This circuit 410 acts as a pass gate circuit that blocks the outputof circuit 411 from the DQ pads when the test mode embodiments are notin use. This prevents any potential forward biasing of transistors whena user of the memory device drives the DQ pads during normal operation.

As an example of operation of this circuit, if TMS is a logic high toselect the serial mode of the register, the “B” input of the multiplexer401 is selected such that the serial input data is output from themultiplexer 401 and input to the D-FF 400. This data is clocked into theflip flop by TCK.

Similarly, if the parallel mode is selected by TMS being at a logic low,the “A” input of the multiplexer 401 is selected and the data is clockedinto the D-FF 400 with TCK. A logic high output from the Q* output ofthe D-FF 400 turns on the lower re-channel transistor 408 while the topp-channel transistor 409 is turned off. The low TMS signal turns on thep-channel transistor 420 and the n-channel transistor 421. If the Q*output is a logic low, the n-channel transistor 408 is turned off whilethe p-channel transistor 409 is turned on, thus outputting a logic highsignal.

FIG. 5 illustrates a flowchart of one embodiment of a method for I/Ocompression during testing of an integrated circuit. The method beginswith the initiation of the test mode by biasing the TMS pin 501 with ahigh voltage that is greater than the typical operating voltages for theintegrated circuit under test. For example, if V_(cc) is 10V, the TMSpin can be biased with 20V.

The CE* line is then brought low by writing a command to a commandregister 503 while TMS is at the high voltage. A command is then writtento a test register 505 while the WE* pin is held low and the ALE pin isheld high. This enables the loading of addresses into the addressregisters. Address register loads are comprised of an eight bit addressand an eight bit data field. In an alternate embodiment, a write protectpin (WP) can also be forced low, as well as other static control pins,to accomplish substantially the same result.

Test data can then be written to the memory array/logic circuit fortesting 506. Many different test patterns can be used as test data suchas all ones, all zeros, alternating ones and zeros, or other testpatterns.

The compression function can then be turned on with a write of anaddress and data to the test register 507. The eight bit address fieldis the address of the register while the eight bit data field selectsthe options available for data compression. In one embodiment, theseoptions are 8:1 compression, 8:2 compression, tri-state/high impedancecondition when test data fails, and DRAM toggle when test data fails.

The test data can be read from the memory array/logic circuit 508. Thecompressed output is indicative of whether a failure has occurred. Forexample, if a compressed logical one is read and all ones had beenwritten as test data, the test has passed. Similarly, if all logicalzeros had been written as test data and a compressed logical zero isread, the test has passed. If the data does not match, a tri-statecondition is read or the DRAM toggle is read, depending on which isselected.

The tester can also access a memory cell bit line by writing to aparticular register 509. This is accomplished by writing the appropriateregister address with the data field comprising the appropriate databits. For example, three bits of the data field allows access, throughthe 8:1 transfer multiplexer 107 of FIG. 1, to eight of the bit lines ofthe memory array 105.

FIG. 6 illustrates a timing diagram of one embodiment of a registerwrite operation as discussed in FIG. 5. The left side of the diagramillustrates the register address write operation while the right sideillustrates the register data write operation. This operation is used toenable the different compression schemes as well as to access the memoryarray bit lines. The address corresponds to the appropriate registerwhile the data corresponds to the appropriate control bits for thedesired operation.

The serially input address (A0-A7) on the TDI pin is clocked in on therising edge of TCK. This occurs while TMS is high (indicating a serialoperation), WE* is high, CLE is low, and ALE is high prior to WE* beinghigh. For purposes of illustration, TCK has a period of 20 ns.

After a predetermined delay time period (i.e., 47 ns), the register data(D0-D7) is serially clocked in on the TDI pin on the rising edge of TCK.During this period, TMS is high, WE* is high, CLE is low, and ALE ishigh before the rising edge of the next WE* pulse. In the illustratedembodiment, the entire register load operation uses 347 ns.

FIG. 7 illustrates a timing diagram of one embodiment of acommand/address register operation as discussed in FIG. 5. The left sideof the diagram illustrates the command register cycle while the rightside illustrates the address register cycle. This operation is used towrite a command word into the appropriate register. For example, thecommand word might be written to the command register to cause CE* to golow or the command might be written to the test register to initiate thetest operation.

TCK, with a 20 ns clock cycle, clocks in the eight bit command data(C0-C7) serially on TDI. This occurs while TMS is logically high, WE* islogically high, and CLE goes low for two clock cycles.

WE* is pulsed after the last rising edge of the clock while TMS and CLEare still high and ALE is low. The address cycle then starts by clockingin the address data on the rising edge of TCK. CLE goes low after twoclock cycles and ALE goes high after four clock cycles. In theillustrated embodiment, the entire register load operation occurs in 347ns.

FIG. 8 illustrates a timing diagram of one embodiment of a serial datainput operation. The left side of the diagram illustrates data input ofByte0 while the right side illustrates data input of Byte1. Thisoperation is used to serially load test data into the memory for testingof the memory cells and/or logic circuits.

Byte0 is clocked in serially with the rising edge of TCK while TMS andWE* are high and CLE and ALE are low. Approximately 42 ns after the lastrising clock edge of Byte0, WE* is pulsed low and Byte1 is clocked inusing substantially the same procedure.

FIG. 9 illustrates a timing diagram of one embodiment of a serial dataoutput operation. The left side of the diagram illustrates the serialdata out of Byte0 while the right side illustrates the serial data outof Byte1. This operation is used to read test data from the memory cellsand/or logic circuit in order to compare the read data with the knownstored data to detect failed memory cells/logic elements.

After TMS goes high and RE* is pulsed low to enable a serial data readoperation, D0-D7 are clocked out on TDO on the rising edge of TCK. BothCLE and ALE are low during this operation. After Byte0 is clocked out,TMS goes back low.

The Byte1 operation is then initiated by RE* being pulsed low. TMS goesback high and D0-D7 are then clocked out serially. CLE and ALE are bothlow during this operation.

The previously described timing diagrams are for purposes ofillustration only. Alternate embodiments can have other times and signalrelationships. For example, the falling edge of TCK may be used as wellas clocking on both edges of TCK.

FIG. 11 illustrates a block diagram of one embodiment of an open/shortscheck in accordance with I/O scan architecture described previously.This architecture enables testing of open circuits and short circuitswithout affecting the speed of the serial path. This figure shows onlyone I/O pad configuration. The remaining I/O pads and I/O scan registersare configured in a substantially similar manner.

The I/O scan register 1102 parallel input and output are coupled to theI/O pad 1101. The input from the I/O scan register 1102 ensures a pathbetween the I/O pad 1101 and the input buffer 1104. The output from theI/O scan register 1102 ensures a path between the output buffer 1103 andthe I/O pad 1101.

FIG. 10 illustrates a functional block diagram of a memory device 1000that can incorporate a memory device as previously described. The memorydevice 1000 is coupled to a controller device 1010. The controllerdevice 1010 may be a microprocessor, a memory controller, a test fixturecontroller, or some other type of controlling circuitry. The memorydevice 1000 and the processor 1010 form part of a test system 1020. Thememory device 1000 has been simplified to focus on features of thememory that are helpful in understanding the present invention.

The memory device includes an array of memory cells 1030 that caninclude flash memory cells or some other type of non-volatile memorycells. The memory array 1030 is arranged in banks of rows and columns.The control gates of each row of memory cells is coupled with a wordlinewhile the drain and source connections of the memory cells are coupledto bit lines. As is well known in the art, the connection of the cellsto the bit lines depends on whether the array is a NAND architecture, aNOR architecture, an AND architecture, or some other array architecture.

An address buffer circuit 1040 is provided to latch address signalsprovided on address input connections A0-Ax 1042. Address signals arereceived and decoded by a row decoder 1044 and a column decoder 1046 toaccess the memory array 1030. It will be appreciated by those skilled inthe art, with the benefit of the present description, that the number ofaddress input connections depends on the density and architecture of thememory array 1030. That is, the number of addresses increases with bothincreased memory cell counts and increased bank and block counts.

The memory device 1000 reads data in the memory array 1030 by sensingvoltage or current changes in the memory array columns using senseamplifier/buffer circuitry 1050. The sense amplifier/buffer circuitry,in one embodiment, is coupled to read and latch a row of data from thememory array 1030. Data input and output buffer circuitry 1060 isincluded for bi-directional data communication over a plurality of dataconnections 1062 with the controller 1010. Write circuitry 1055 isprovided to write data to the memory array.

Control circuitry 1070 decodes signals (e.g., ALE, CLE, CE*, RE*)provided on control connections 1072 from the processor 1010. Thesesignals are used to control the operations on the memory array 1030,including data read, data write, and erase operations. The controlcircuitry 1070 may be a state machine, a sequencer, or some other typeof controller.

Registers 1090 are coupled to the control circuitry 1070. These registerinclude the command, test, and compression selection registers asdiscussed previously. This register block 1090 can also include otherregisters as needed for operation and testing of the memory device.

The memory device illustrated in FIG. 10 has been simplified tofacilitate a basic understanding of the features of the memory and isfor purposes of illustration only. A more detailed understanding ofinternal circuitry and functions of memories are known to those skilledin the art. Alternate embodiments may include a memory cell of oneembodiment of the present invention in other types of electronicsystems.

CONCLUSION

In summary, the embodiments discussed herein enable a pin reduction andI/O compression during I/O scan testing. This scheme allows uncompresseddata to move in and out of the integrated circuit while also providingvarious compression schemes to reduce transfer of data during testing.The present embodiments provide for uncompressed data input such ascommand and address in addition to uncompressed output through the TDOpin. An additional embodiment provides an 8:1 transfer pass gatemultiplexer for analog bit line access.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement that is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. Many adaptations ofthe invention will be apparent to those of ordinary skill in the art.Accordingly, this application is intended to cover any adaptations orvariations of the invention. It is manifestly intended that thisinvention be limited only by the following claims and equivalentsthereof.

1. A memory device comprising: a memory array comprising a plurality ofmemory cells; and an input/output compression apparatus coupled to thememory array, the apparatus comprising: a conversion circuit configuredto perform both serial-to-parallel and parallel-to-serial conversions;and a compression circuit, coupled to the conversion circuit, configuredto output data from the memory array wherein a compression option of thecompression circuit is selectable in response to an address and datasuch that the address selects a register and the data selects thecompression option.
 2. The memory device of claim 1 wherein the memoryarray comprises one of a NAND architecture, a NOR architecture, or anAND architecture.
 3. The memory device of claim 1 wherein theinput/output compression apparatus is configured to reduce aninput/output pin quantity of the memory device.
 4. The memory device ofclaim 3 wherein the input/output pins are coupled to one of a data insignal, a data out signal, a clock signal, a mode select signal, acommand latch enable signal, an address latch enable signal, a writeenable signal, or a read enable signal.
 5. The memory device of claim 4wherein the data in, data out, clock, and mode select signals aremultiplexed.
 6. The memory device of claim 4 wherein the data in signaland the data out signal are serial data signals.
 7. The memory device ofclaim 4 wherein the mode select signal is configured to select between aparallel mode and a serial mode.
 8. The memory device of claim 4 whereinthe input/output pin coupled to the mode select signal is alsoconfigured to initiate a test operation of the memory device.
 9. Amemory device comprising: a memory array having a plurality of memorycells; a plurality of input/output pads coupled to the memory array forinputting data to the memory array and outputting data from the memoryarray; and an input/output compression apparatus coupled between thememory array and at least one of the plurality of input/output pads, theapparatus comprising: a register coupled to the memory array andconfigured to perform both serial-to-parallel and parallel-to-serialconversions on data from the memory array; an input/output buffer thatcouples the register and the at least one of the plurality ofinput/output pads to the memory array; and a compression circuit coupledto the input/output buffer for outputting data from the memory array ina selectable compressed format wherein the register is selected and acompression ratio of the compression circuit is selectable by commanddata.
 10. The memory device of claim 9 wherein the register isconfigured to perform the serial-to-parallel and parallel-to-serialconversions in response to a clock signal, a mode select signal, and adata input signal.
 11. The memory device of claim 9 and furtherincluding an expansion buffer coupled to the at least one of theplurality of input/output pads and the input/output buffer wherein theexpansion buffer is configured to expand a single received bit into aplurality of bits.
 12. The memory device of claim 9 and furtherincluding a multiplexer coupled to the memory array wherein themultiplexer is configured to access at least one bit line of the memoryarray.
 13. The memory device of claim 9 wherein the command datacomprises an address field and a data field.
 14. The memory device ofclaim 12 wherein the command data determines access to the bit lines.15. The memory device of claim 13 wherein a particular address in theaddress field determines selection of a register of a particularinput/output pad of the plurality of input/output pads and particulardata in the data field selects options available for data compression bythe compression circuit.
 16. The memory device of claim 14 whereinparticular bits of the command data determines the access to the bitlines.
 17. The memory device of claim 9 and further including anopen/short circuit coupled to at least one input/output pad of theplurality of input/output pads.
 18. The memory device of claim 17wherein the open/short circuit comprises: an input/output registercoupled to the at least one input/output pad and configured to have aparallel input and a parallel output; an input buffer that provides aninput to the input/output register; and an output buffer that providesan output from the input/output register.
 19. The memory device of claim9 wherein the memory device comprises flash memory.
 20. The memorydevice of claim 9 wherein each register comprises: a multiplexer havinga parallel input and a serial input that are selectable by a mode selectsignal; a flip-flop coupled to an output of the multiplexer, theflip-flop configured to store data from the multiplexer; a level shifterfor translating the mode select signal from a first voltage to a secondvoltage; and an output circuit coupled to the flip-flop and the levelshifter for controlling output of data from the flip-flop and the modeselect signal at the second voltage.